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 IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4
Rev. 01 -- 26 March 2009 Product data sheet
1. Product profile
1.1 General description
IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are designed to protect appliances from destruction by either:
* ElectroStatic Discharges (ESD) of 30 kV, far exceeding IEC 61000-4-2 standard,
level 4
* overvoltage * wrong polarity
Each device has a single high-performance ESD-protection diode with the anode and cathode each connected to two solder balls. The IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are fabricated using monolithic silicon technology in a Wafer-Level Chip-Scale Package (WLCSP) with a pitch of 0.4 mm (IP438xCX4) or 0.5 mm (IP4085CX4).
1.2 Features
I I I I Pb-free, RoHS and Dark Green compliant Single integrated high-performance ESD-protection diode Surge immunity according to IEC 61000-4-5 (8/20 s) up to 60 A (IP4085CX4) ESD protection of >30 kV contact discharge, far exceeding IEC 61000-4-2 standard, level 4 I Small 2 x 2 solder ball WLCSP package with 0.4 mm or 0.5 mm pitch
1.3 Applications
I General purpose ESD-protection such as for charger interfaces in: N Cellular and PCS mobile handsets N Cordless telephones N Wireless data (WAN/LAN) systems
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
2. Pinning information
IP4085CX4 IP438xCX4
1 2
ball A1 index area
A
B
001aaj238
Transparent top view
Fig 1. Table 1. Pin
Pin configuration IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4 Pinning Description diode cathode diode anode
A1 and A2 B1 and B2
3. Ordering information
Table 2. Ordering information Package Name IP4085CX4/LF IP4385CX4/LF IP4386CX4/LF IP4387CX4/LF WLCSP4 WLCSP4 WLCSP4 WLCSP4 Description wafer level chip-size package: 4 bumps; 0.91 x 0.91 x 0.65 mm wafer level chip-size package: 4 bumps; 0.76 x 0.76 x 0.61 mm wafer level chip-size package: 4 bumps; 0.76 x 0.76 x 0.61 mm wafer level chip-size package: 4 bumps; 0.76 x 0.76 x 0.61 mm Version IP4085CX4/LF IP438xCX4/LF IP438xCX4/LF IP438xCX4/LF Type number
4. Functional diagram
A1 A2
B1
B2
001aaj239
Fig 2.
Schematic diagram IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
2 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
5. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC Parameter supply voltage Conditions IP4085CX4/LF; IP4386CX4/LF IP4385CX4/LF IP4387CX4/LF VESD electrostatic discharge voltage all pins to ground contact discharge air discharge IEC 61000-4-2, level 4; all pins to ground contact discharge air discharge IPP peak pulse current IEC 61000-4-5; tp = 8/20 s IP4085CX4 IP4385CX4; IP4387CX4 IP4386CX4 IFSM non-repetitive peak forward current 10 pulses; 1 pulse per second IP4085CX4; IP4386CX4; tp = 2 ms IP4085CX4; IP4386CX4; tp = 5 ms IP4085CX4; IP4386CX4; tp = 100 ms IP4385CX4; IP4387CX4; tp = 2 ms IP4385CX4; IP4387CX4; tp = 5 ms IP4385CX4; IP4387CX4; tp = 100 ms Ptot total power dissipation forward conducting IP4085CX4 IP4385CX4; IP4386CX4; IP4387CX4
[2] [3] [3] [1] [1]
Min -0.5 -0.5 -0.5 -30 -15
Max +14 +5.5 +8.0 +30 +15
Unit V V V kV kV
-8 -15
+8 +15
kV kV
60 33 28
-
A A A
10
-
A
8.5
-
A
3.5
-
A
11
-
A
9
-
A
5
-
A
-
1 0.7
W W
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
3 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
Table 3. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tstg Treflow(peak) Tamb
[1] [2] [3]
Parameter storage temperature peak reflow temperature ambient temperature
Conditions 10 s maximum
Min -55 -30
Max +150 260 +85
Unit C C C
Device tested with over 1000 pulses of 30 kV contact discharges, according to the IEC 61000-4-2 model. Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures above 50 C, the guaranteed life time is 48 hours at 0.7 W, assuming Rth to be 130 K/W as specified in Table 4. Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.
6. Thermal characteristics
Table 4. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions on a 2-layer PCB IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4
[1]
Typ 130
Unit K/W
[1]
Depends on details of layout.
7. Characteristics
Table 5. Electrical characteristics Tamb = 25 C; unless otherwise specified. Symbol VBR Parameter breakdown voltage Conditions IR = 15 mA IP4085CX4; IP4386CX4 IP4385CX4 IP4387CX4 VCL(trt) transient clamping voltage IR = 1 A; Tamb 85 C at surge peak pulse according to IEC 61000-4-5 IP4085CX4 IP4385CX4 IP4386CX4 IP4387CX4 ILR reverse leakage current IP4085CX4; IP4385CX4 IP4386CX4 IP4387CX4 VR = +5.0 V VR = +14.0 V VR = +8.0 V 200 200 800 nA nA nA 20.0 10.0 20.0 13.0 V V V V 16 7.0 10 V V V Min Typ Max Unit
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
4 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
Table 5. Electrical characteristics ...continued Tamb = 25 C; unless otherwise specified. Symbol Cd Parameter diode capacitance IP4085CX4 IP4385CX4 IP4386CX4 IP4387CX4 VFd diode forward voltage IP4085CX4 IP4385CX4 IP4386CX4 IP4387CX4 IF = 850 mA Tamb +25 C -30 C Tamb +85 C Tamb +25 C -30 C Tamb +85 C Tamb +25 C -30 C Tamb +85 C Tamb +25 C -30 C Tamb +85 C 1.15 1.3 1.0 1.1 1.15 1.3 1.10 1.25 V V V V V V V V Conditions DC bias VR = 0 V; f = 1 MHz 180 450 160 290 pF pF pF pF Min Typ Max Unit
8. Application information
8.1 Forward current DC clamping voltage
The forward current DC clamping voltage is of interest when protecting circuits from voltage sources with the wrong polarity. Figure 3 shows the basic measurement setup.
IF V
VCL
001aaj240
Fig 3.
Measuring DC clamping voltage with forward current
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
5 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
1.1 VCL (V)
(1)
001aaj241
1.1 VCL (V) 1.0
(1)
001aaj242
1.0
(2)
(2)
0.9
(3)
0.9
(3)
0.8
0.8
0.7 0 0.2 0.4 0.6 0.8 IF (A) 1.0
0.7 0 0.2 0.4 0.6 0.8 IF (A) 1.0
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 4.
DC clamping voltage as a function of forward current; IP4085CX4
Fig 5.
DC clamping voltage as a function of forward current; IP4385CX4
1.1 VCL (V) 1.0
(1)
001aaj243
1.1 VCL (V) 1.0
(1)
001aaj244
(2)
(3)
(2)
0.9
0.9
(3)
0.8
0.8
0.7 0 0.2 0.4 0.6 0.8 IF (A) 1.0
0.7 0 0.2 0.4 0.6 0.8 IF (A) 1.0
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 6.
DC clamping voltage as a function of forward current; IP4386CX4
Fig 7.
DC clamping voltage as a function of forward current; IP4387CX4
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
6 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
8.2 Peak clamping voltage
The peak clamping voltage for forward and reverse current pulses of 8/20 s (IEC 61000-4-5) is significant when protecting circuits from power surges due to voltage discharges. The current pulse shape over time is shown in Figure 9. The basic measurement setup for forward current and reverse current pulses respectively are shown in Figure 8 and Figure 14.
VCL(M) V IPP
001aaj245
Fig 8.
Measuring peak clamping voltage with forward current
120 IPP (%) 80 100 % IPP; 8 s
001aaj558
e-t 50 % IPP; 20 s
40
0 0 10 20 30 t (s) 40
Fig 9.
8/20 s current pulse waveform according to IEC 61000-4-5
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
7 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
17 VCL(M) (V) 15
(1)
001aaj247
20 VCL(M) (V) 16
001aaj248
(3)
13
(3) (2)
11
12 9
(1) (2)
7 20 28 36 IF (A) 44
8 20 28 36 IF (A) 44
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 10. Peak clamping voltage as a function of forward current; IP4085CX4
Fig 11. Peak clamping voltage as a function of forward current; IP4385CX4
20 VCL(M) (V) 16
(3) (2) (1)
001aaj249
20 VCL(M) (V) 16
001aaj250
12
12
(2)
(3) (1)
8 20 28 36 IF (A) 44
8 20 28 36 IF (A) 44
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 12. Peak clamping voltage as a function of forward current; IP4386CX4
Fig 13. Peak clamping voltage as a function of forward current; IP4387CX4
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
8 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
VCL(M) V IPP
001aaj246
Fig 14. Measuring peak clamping voltage with reverse current
19 VCL(M) (V) 18
(2)
001aaj251
8.75 VCL(M) (V) 8.50
(2)
001aaj252
8.25
(1) (1)
8.00 17
(3) (3)
7.75
16 0.2
0.4
0.6
0.8
1.0
1.2
1.4 IR (A)
1.6
7.50 0.4
0.8
1.2 IR (A)
1.6
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 15. Peak clamping voltage as a function of reverse current; IP4085CX4
Fig 16. Peak clamping voltage as a function of reverse current; IP4385CX4
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
9 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
19 VCL(M) (V) 18
001aaj253
12.2 VCL(M) (V) 11.8
(2)
001aaj254
(2)
(1)
(1)
17
(3)
11.4
(3)
16 0.3
0.7
1.1 IR (A)
1.5
11.0 0.4
0.8
1.2 IR (A)
1.6
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
(1) Tamb = +25 C. (2) Tamb = +85 C. (3) Tamb = -30 C.
Fig 17. Peak clamping voltage as a function of reverse current; IP4386CX4
Fig 18. Peak clamping voltage as a function of reverse current; IP4387CX4
Remark: Measurements done on a heat-dissipation optimized PCB with massive copper area under the DUT.
9. Marking
ball A1 index area 1 2
A lot/date code information (characters are marked upside down)
B
Transparent top view
001aaj255
Fig 19. Marking of IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
10 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
10. Package outline
WLCSP4: wafer level chip-size package; 4 bumps; 0.91 x 0.91 x 0.65 mm IP4085CX4/LF
D
B
A
ball A1 index area
E
A
A1
detail X
e b v CAB
C y
B
e
A
ball A1 index area
1
2 X
0
0.5 scale
1 mm
Dimensions Unit mm A A1 b D E e v y
max 0.70 0.26 0.37 0.96 0.96 nom 0.65 0.24 0.32 0.91 0.91 min 0.60 0.22 0.27 0.86 0.86
0.5 0.005 0.02
ip4085cx4_lf_po
Outline version IP4085CX4/LF
References IEC JEDEC JEITA
European projection
Issue date 08-12-04
Fig 20. Package outline IP4085CX4/LF (WLCSP4)
IP4085_4385_4386_4387_CX4_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
11 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
WLCSP4: wafer level chip-size package; 4 bumps; 0.76 x 0.76 x 0.61 mm
IP438xCX4/LF
D
B
A
ball A1 index area
E
A
A1
detail X e b v CAB
C y
B
e
A
ball A1 index area
1
2
X
0 Dimensions Unit mm A A1 b D E e v y
0.25 scale
0.5 mm
max 0.66 0.22 0.31 0.81 0.81 nom 0.61 0.20 0.26 0.76 0.76 min 0.56 0.18 0.21 0.71 0.71
0.4 0.005 0.02
ip438xcx4_lf_po
Outline version IP438xCX4/LF
References IEC JEDEC JEITA
European projection
Issue date 08-12-04
Fig 21. Package outline IP438xCX4/LF (WLCSP4)
IP4085_4385_4386_4387_CX4_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
12 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
11. Design and assembly recommendations
11.1 PCB design guidelines
For optimum performance it is recommended to use a Non-Solder Mask PCB Design (NSMD), also known as a copper-defined design, incorporating laser-drilled micro-vias connecting the ground pads to a buried ground-plane layer. This results in the lowest possible ground inductance and provides the best high frequency and ESD performance. For this case, refer to Table 6 for the recommended PCB design parameters.
Table 6. Parameter PCB pad diameter Micro-via diameter Solder mask aperture diameter Copper thickness Copper finish PCB material Recommended PCB design parameters Value or Specification 200 m 100 m (0.004 inch) 370 m 20 m to 40 m AuNi FR4
11.2 PCB assembly guidelines for Pb-free soldering
Table 7. Parameter Solder screen aperture diameter Solder screen thickness Solder paste: Pb-free Solder/flux ratio Solder reflow profile Assembly recommendations Value or Specification 330 m 100 m (0.004 inch) SnAg (3 % to 4 %) Cu (0.5 % to 0.9 %) 50/50 see Figure 22
T (C) Treflow(peak) 250 230 217 cooling rate
pre-heat
t1
t2 t3 t4 t5
t (s)
001aai943
The device is capable of withstanding at least three reflows of this profile.
Fig 22. Pb-free solder reflow profile
IP4085_4385_4386_4387_CX4_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
13 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
Reflow soldering process characteristics Parameter time 1 time 2 time 3 time 4 time 5 rate of change of temperature cooling rate pre-heat Conditions soak time time during T 250 C time during T 230 C time during T > 217 C Min 230 60 10 30 2.5 Typ Max 260 180 30 50 150 540 -6 4.0 Unit C s s s s s C/s C/s
Table 8. Symbol t1 t2 t3 t4 t5 dT/dt
Treflow(peak) peak reflow temperature
12. Abbreviations
Table 9. Acronym DUT FR4 LAN PCB PCS RoHS WAN WLCSP Abbreviations Description Device Under Test Flame Retard 4 Local Area Network Printed-Circuit Board Personal Communication System Restriction of Hazardous Substances Wide Area Network Wafer-Level Chip-Scale Package
13. Revision history
Table 10. Revision history Release date 20090326 Data sheet status Product data sheet Change notice Supersedes Document ID IP4085_4385_4386_4387_CX4_1
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
14 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
14. Legal information
14.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
14.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
IP4085_4385_4386_4387_CX4_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 26 March 2009
15 of 16
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
16. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 9 10 11 11.1 11.2 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Forward current DC clamping voltage . . . . . . . 5 Peak clamping voltage . . . . . . . . . . . . . . . . . . . 7 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Design and assembly recommendations . . . 13 PCB design guidelines . . . . . . . . . . . . . . . . . . 13 PCB assembly guidelines for Pb-free soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 March 2009 Document identifier: IP4085_4385_4386_4387_CX4_1


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